Resonant intersubband polariton-LO phonon scattering in an optically pumped polaritonic device

Year: 2018

Authors: Manceau J. -M., Tran N. -L., Biasiol G., Laurent T., Sagnes I., Beaudoin G., De Liberato S., Carusotto I., Colombelli R.

Autors Affiliation: [Manceau, J. -M.; Tran, N. -L.; Laurent, T.; Sagnes, I.; Beaudoin, G.; Colombelli, R.] Univ Paris Saclay, Univ Paris Sud, Ctr Nanosci & Nanotechnol, CNRS,UMR 9001,Orsay C2N, F-91405 Orsay, France.
[Biasiol, G.] IOM, CNR, Lab TASC, Area Sci Pk,SS 14 Km 163-5, I-34149 Trieste, Italy.
[De Liberato, S.] Univ Southampton, Dept Phys & Astron, Highfield Campus, Southampton SO17 1BJ, Hants, England.
[Carusotto, I.] INO, CNR, BEC Ctr, I-38123 Povo, Italy and Univ Trento, Dipartimento Fis, I-38123 Povo, Italy.

Abstract: We report experimental evidence of longitudinal optical (LO) phonon-intersubband polariton scattering processes under resonant injection of light. The scattering process is resonant with both the initial (upper polariton) and final (lower polariton) states and is induced by the interaction of confined electrons with longitudinal optical phonons. The system is optically pumped with a mid-IR laser tuned between 1094 cm(-1) and 1134 cm(-1) (lambda = 9.14 mu m and lambda = 8.82 mu m). The demonstration is provided for both GaAs/AlGaAs and InGaAs/AlInAs doped quantum well systems whose intersubband plasmon lies at a wavelength of approximate to 10 mu m. In addition to elucidating the microscopic mechanism of the polariton-phonon scattering, it is found to differ substantially from the standard single particle electron-LO phonon scattering mechanism, and this work constitutes an important step towards the hopefully forthcoming demonstration of an intersubband polariton laser. Published by AIP Publishing.

Journal/Review: APPLIED PHYSICS LETTERS

Volume: 112 (19)      Pages from: 191106-1  to: 191106-5

KeyWords: quantum-wells; laser; gaas
DOI: 10.1063/1.5029893

Citations: 15
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