Torus Breakdown in a Uni Junction Memristor
Authors: Cinoux JM., Meucci R., Euzzor S., di Garbo A.
Autors Affiliation: [Cinoux, Jean-Marc] UMR CNRS 7020, Lab Informat & Syst, CS 60584, F-83041 Toulon 9, France.
[Meucci, Riccardo; Euzzor, Stefano] CNR, Ist Nazl Ott, Largo E Fermi 6, I-50125 Florence, Italy.
[di Garbo, Angelo] CNR, Ist Biofis, Via G Moruzzi 1, I-56124 Pisa, Italy.
Abstract: Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called “memristor”. So, we have used the memristor’s direct current (DC) v(m)-i(m) characteristic for modeling the UJT’s DC current-voltage characteristic. This has led us to confirm on the one hand, that the UJT is a memristor and, on the other hand, to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.
Journal/Review: INTERNATIONAL JOURNAL OF BIFURCATION AND CHAOS
Volume: 28 (10) Pages from: 1850128-1 to: 1850128-11
KeyWords: Bifurcation (mathematics); Current voltage characteristics; Dynamical systems; Transistors, Autonomous dynamical systems; Dc current; Direct current; Electronic component; Limit-cycle; Memristor; Torus breakdown, MemristorsDOI: 10.1142/S0218127418501286Connecting to view paper tab on IsiWeb: Click here