Scientific Results

Optical properties of silicon-vacancy color centers in diamond created by ion implantation and post-annealing

Year: 2018

Authors: Lagomarsino S., Flatae A.M., Sciortino S., Gorelli F., Santoro M., Tantussi F., De Angelis F., Gelli N., Taccetti F., Giuntini L., Agio M.

Autors Affiliation: Laboratory of Nano-Optics, University of Siegen, 57072 Siegen, Germany; Istituto Nazionale di Fisica Nucleare, Sezione di Firenze, 50019 Sesto Fiorentino, Italy; Department of Physics and Astrophysics, University of Florence, 50019 Sesto Fiorentino, Italy; National Institute of Optics (INO), National Research Council (CNR), 50019 Sesto Fiorentino, Italy; European Laboratory for Nonlinear Spectroscopy (LENS), 50019 Sesto Fiorentino, Italy; Plasmon Nanotechnologies, Istituto Italiano di Tecnologia, 16163 Genoa, Italy

Abstract: Silicon-vacancy (SiV) color centers have been created in diamond by ion implantation and post annealing at LABEC (Florence). A wide range of implantation depths (0–2.4 μm) and fluences (108–1015 cm−2), along with a variety of substrates (single and poly-crystals) have been explored. The photoluminescence properties of the SiV centers have been studied at room temperature, including their single-photon emission characteristics. Single-photon emitters have been obtained at the lower-end of the implantation fluences range. They exhibit a short excited-state lifetime (~1 ns), a strong zero-phonon transition with a narrow linewidth (~1.6 nm) and a very small inhomogeneous broadening (0.015 nm), features that qualify them for application in quantum optical technologies. The activation yield of SiV centers has been assessed under different experimental conditions. It has been found to be independent of the implantation energy and in the range of 3% after thermal annealing.

Journal/Review: DIAMOND AND RELATED MATERIALS

Volume: 84      Pages from: 196  to: 203

More Information: Financial support from the EC Seventh Framework Programme ( 248855 ), the Helmoltz Association ( 283286 ), the University of Siegen and Istituto Italiano di Tecnologia is gratefully acknowledged. The authors warmly thank INFN-CHNet, the network of laboratories of the INFN for cultural heritage, for support and precious contributions in terms of instrumentation and personnel. This article is based upon work from COST Action MP1403 “Nanoscale Quantum Optics,” supported by COST (European Cooperation in Science and Technology). We gratefully thank also Nicole Fabbri, Costanza Toninelli and Silvia Orlanducci for helpful discussions. Appendix A
KeyWords: Annealing; Chemical activation; Color centers; Excited states; Ion implantation; Ions; Optical properties; Particle beams; Photons; Silicon; Silicon compounds, Excited state lifetimes; Experimental conditions; Inhomogeneous broadening; Photoluminescence properties; Single photon emission; Single photon emitters; SiV centers; Thermal activation, Vanadium compounds
DOI: 10.1016/j.diamond.2018.03.010

Citations: 14
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