On quantitative analysis of interband recombination dynamics: Theory and application to bulk ZnO

Year: 2013

Authors: Lettieri S., Capello V., Santamaria L., Maddalena P.

Autors Affiliation: Institute for Superconductors, Oxides and Innovative Materials, (CNR-SPIN), U.O.S. Napoli, Via Cintia, I-80126 Napoli, Italy; Physics Department, University of Naples \”Federico II,\” Via Cintia I-80126 Napoli, Italy; Present address: INO-CNR, Istituto Nazionale di Ottica, Sezione di Napoli, Via Campi Flegrei 34, I-80078 Pozzuoli (NA), Italy

Abstract: The issue of the quantitative analysis of time-resolved photoluminescence experiments is addressed by developing and describing two approaches for determination of unimolecular lifetime, bimolecular recombination coefficient, and equilibrium free-carrier concentration, based on a quite general second-order expression of the electron-hole recombination rate. Application to the case of band-edge emission of ZnO single crystals is reported, evidencing the signature of sub-nanosecond second-order recombination dynamics for optical transitions close to the interband excitation edge. The resulting findings are in good agreement with the model prediction and further confirm the presence, formerly evidenced in literature by non-optical methods, of near-surface conductive layers in ZnO crystals with sheet charge densities of about 3-5 x 10(13) cm(-2). (C) 2013 AIP Publishing LLC.


Volume: 103 (24)      Pages from: 241910  to: 241910

KeyWords: carrier density; electron hole recombination;
DOI: 10.1063/1.4847615

Citations: 3
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