Detection of a 2.8 THz quantum cascade laser with a semiconductor nanowire field-effect transistor coupled to a bow-tie antenna

Year: 2014

Authors: Ravaro M., Locatelli M., Viti L., Ercolani D., Consolino L., Bartalini S., Sorba L., Vitiello M. S., De Natale P.

Autors Affiliation: INO, Istituto Nazionale di Ottica, CNR, Largo E. Fermi 6, Firenze I-50125, Italy; LENS, European Laboratory for Nonlinear Spectroscopy, Via N. Carrara 1, Sesto Fiorentino (FI) I-50019, Italy; NEST, Istituto Nanoscienze, CNR and Scuola Normale Superiore, Piazza San Silvestro 12, Pisa I-56127, Italy

Abstract: The use of a high-electron mobility semiconductor nanowire as transistor channel has recently allowed the extension of the spectral coverage of THz field-effect transistor detectors up to 1.5 THz. In this report, we demonstrate efficient operation of a field-effect transistor detector based on a semiconductor nanowire at a much higher frequency, 2.8 THz, with a responsivity approximate to 5 V/W in a bandwidth approximate to 100 kHz, thus proving the full potential of such approach for the detection of THz quantum cascade lasers. Finally, such a THz sensing system is exploited to perform raster scan transmission imaging, with high spatial resolution, signal-to-noise ratio, and acquisition rate. (C) 2014 AIP Publishing LLC.


Volume: 104 (8)      Pages from: 083116  to: 083116

More Information: This work was partly supported by the Italian Ministry of Education, University, and Research (MIUR) through the program \”FIRB – Futuro in Ricerca 2010\” RBFR10LULP \”Fundamental research on Terahertz photonic devices.\”
KeyWords: Antennas; Field effect transistors; Quantum cascade lasers; Sensors, Acquisition rates; High spatial resolution; Higher frequencies; Mobility semiconductors; Semiconductor nanowire; THz quantum cascade lasers; Transistor channels; Transmission imaging, Nanowires
DOI: 10.1063/1.4867074

Citations: 15
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