Scientific Results

Trapping properties and model for the deep-level center in Se-Doped AlxGa1-xAs

Year: 1988

Authors: OH E.G., HANNA M.C., LU Z.H., SZMYD D.M., LUCCHESINI A., MAJERFELD A.

Autors Affiliation: University of Colorado at Boulder, Boulder, CO, USA

Journal/Review:

KeyWords: surface states, band structure; electron density of states;

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