Photophysics of single silicon vacancy centers in diamond: implications for single photon emission
Authors: Neu E., Agio M., Becher Ch.
Autors Affiliation: Universität des Saarlandes, Fachrichtung 7.2 (Experimentalphysik), 66123 Saarbrücken, Germany; National Institute of Optics (INO-CNR) and European Laboratory for Nonlinear Spectroscopy (LENS), 50019 Sesto Fiorentino, Italy
Abstract: Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics of single SiV centers in diamond nanocrystals on iridium surfaces including an intensity dependent de-shelving process. Furthermore, we investigate the brightness and photostability of single centers and find maximum single photon rates of 6.2 Mcps under continuous excitation. We investigate the collection efficiency of the fluorescence and estimate quantum efficiencies of the SiV centers. (C) 2012 Optical Society of America
Journal/Review: OPTICS EXPRESS
Volume: 20 (18) Pages from: 19956 to: 19971
More Information: We thank M. Fischer, S. Gsell and M. Schreck (University of Augsburg) for supplying the CVD diamond samples. The project was financially supported by the Bundesministerium fur Bildung und Forschung within the projects EphQuaM (contract 01BL0903) and QuOReP (contract 01BQ1011). M. Agio wishes to thank F. Koenderink (AMOLF) and he acknowledges financial support from the EU-STREP project \”QIBEC\”.DOI: 10.1364/OE.20.019956Citations: 64data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2019-09-15References taken from IsiWeb of Knowledge: (subscribers only)Connecting to view paper tab on IsiWeb: Click hereConnecting to view citations from IsiWeb: Click here