Single photon timing resolution and detection efficiency of the IRST silicon photo-multipliers

Year: 2007

Authors: Collazuol G., Ambrosi G., Boscardin M., Corsi F., Dalla Betta G.F., Del Guerra A., Dinu N., Galimberti M., Giulietti D., Gizzi LA., Labate L., Llosa G., Marcatili S., Morsani F., Piemonte C., Pozza A., Zaccarelli L., Zorzi N.

Autors Affiliation: Scuola Normale Superiore, 56127 Pisa, Italy;
INFN Sezione di Pisa, 56127 Pisa, Italy;
Dipartimento di Fisica, Universita` di Pisa, 56127 Pisa, Italy;
Fondazione Bruno Kessler – IRST, Divisione Microsistemi, 38050 Trento, Italy;
Intense Laser Irradiation Laboratory, IPCF-CNR, 56127 Pisa, Italy;
INFN Sezione di Perugia, 06123 Perugia, Italy;
INFN Sezione di Padova, Gruppo Collegato di Trento, 38050 Trento, Italy;
DEE—Politecnico di Bari and INFN Sezione di Bari, 70125 Bari, Italy

Abstract: Silicon photo-multipliers (SiPM) consist in matrices of tiny, passive quenched avalanche photo-diode cells connected in parallel via integrated resistors and operated in Geiger mode. Novel types of SiPM are being developed at FBK-IRST (trento, Italy). Despite their classical shallow junction n-on-p structure the devices are unique in their enhanced photo-detection efficiency (PDE) for short-wavelengths and in their low level of dark rate and excess noise factor. After a summary of the extensive SiPM characterization we will focus on the study of PDE and the single photon timing resolution. (C) 2007 Elsevier B.V. All rights reserved.


Volume: 581(1/2)      Pages from: 461  to: 464

More Information: Proceedings Paper: 11th International Vienna Conference on Instrumentation, Vienna, AUSTRIA, FEB 19-24, 2007
KeyWords: silicon photomultiplier; opto-semiconductor; photon detection efficiency; high resolution timing; single photon
DOI: 10.1016/j.nima.2007.08.027

Citations: 75
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