Electrical characterization of organic based transistors: stability issue

Year: 2005

Authors: Gomes H.L., Stallinga P., Dinelli F., Murgia M., Biscarini F., de Leeuw D.M., Muccini M., Mullen K.

Autors Affiliation: University of Algarve, Faculty of Sciences/Technology, Campus de Gambelas, 8000 Faro, Portugal; CNR-Ist. Studio Mat. Nanostrutturati, Via P. Gobetti 101, I-40129 Bologna, Italy; Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, Netherlands; Max Planck Inst. for Polymer Res., Ackermannweg, 10, 55128 Mainz, Germany

Abstract: An investigation into the stability of metal insulator semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow a stretched-hyperbola type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T approximate to 220 K and the other at T approximate to 300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and alpha-sexithiophene deposition parameters. Copyright (c) 2005 John Wiley A Sons, Ltd.

Journal/Review: POLYMERS FOR ADVANCED TECHNOLOGIES

Volume: 16 (2-3)      Pages from: 227  to: 231

KeyWords: Amorphous; Electrical properties; Organic transistor; Silicones; Stabilization
DOI: 10.1002/pat.558

Citations: 51
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