Tunable frequency-controlled laser source in the near ultraviolet based on doubling of a semiconductor diode laser

Year: 1996

Authors: de Angelis M., Tino G.M., De Natale P., Fort C., Modugno G., Prevedelli M., Zimmermann C.

Autors Affiliation: I.N.O. Sezione di Napoli, Dipartimento di Scienze Fisiche dell’Università di Napoli Federico II, Mostra d’Oltremare Pad. 20, I-80125 Napoli, Italy
European Laboratory for Nonlinear Spectroscopy (LENS), Largo E. Fermi 2, I-50125 Firenze, Italy

Abstract: Continuously tunable ultraviolet laser radiation at 397 nm was generated by doubling the output of a semiconductor diode laser. The fundamental radiation was provided by a 150 mW AlGaAs laser diode injected by a low-power AlGaAs laser diode which was frequency stabilized by optical feedback using a new scheme of a miniature external cavity. Second-harmonic generation was produced in a lithium-triborate crystal placed in a compact enhancement cavity. The fundamental radiation was used for sub-Doppler spectroscopy of the Ar I 4s(3)P degrees(0)-4p(1)P(1) transition at 795 nm; the second-harmonic radiation was used for spectroscopy of the Ca II 4(2)S(1/2)-4(2)P(1/2) transition at 397 nm.

Journal/Review: APPLIED PHYSICS B-LASERS AND OPTICS

Volume: 62 (4)      Pages from: 333  to: 338

KeyWords: Crystals; Frequency stability; High power lasers; Laser mode locking; Laser tuning; Light sources; Optical devices; Oscillators (electronic); Second harmonic generation; Semiconducting aluminum compounds; Spectroscopy; Ultraviolet radiation, Continuously tunable ultraviolet laser radiation; Injection locking; Lithium-triborate crystal; Sub Doppler spectroscopy; Tunable frequency controlled laser source, Semiconductor lasers
DOI: 10.1007/BF01081194

Citations: 15
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