Scalable creation of silicon-vacancy color centers in diamond by ion implantation through a 1-μm pinhole

Year: 2021

Authors: Hunold L., Lagomarsino S., Flatae A.M., Kambalathmana H., Sledz F., Sciortino S., Gelli N., Giuntini L., Agio M.

Autors Affiliation: Laboratory of Nano-Optics and Cμ, University of Siegen; Istituto Nazionale di Fisica Nucleare Sezione di Firenze; Department of Physics and Astronomy University of Florence; National Institute of Optics, National Research Council (CNR)

Abstract: The controlled creation of quantum emitters in diamond represents a major research effort in the fabrication of single-photon devices. Here, the scalable production of silicon-vacancy (SiV) color centers in single-crystal diamond by ion implantation up to 1 μm depths is presented. The lateral position of the SiV is spatially controlled by a 1- μm pinhole placed in front of the sample, which can be moved nanometer precise using a piezo stage. The initial implantation position is controlled by monitoring the ion beam position with a camera. Hereby, silicon ions are implanted at the desired spots in an area comparable to the diffraction limit. The role of ions scattered by the pinhole and the activation yield of the SiV color centers for the creation of single quantum emitters is also discussed.


Volume: 4 (12)      Pages from: 2100079-1  to: 2100079-6

More Information: The authors acknowledge financial support from the University of Siegen and the German Research Foundation (DFG) (INST 221/118-1 FUGG, 410405168). Experimental support was provided by N. Soltani (optical setup) and M. Hepp (SEM images) in association with the Micro- and Nanoanalytics Facility of the University of Siegen. The authors also acknowledge INFN-CHNet, the network of laboratories of the INFN for cultural heritage, for support and precious contributions in terms of instrumentation and personnel. The authors wish to thank F. Taccetti for experimental assistance and suggestions. Open access funding enabled and organized by Projekt DEAL.
KeyWords: ion implantation, CVD diamond, color centers, single-photon emitters
DOI: 10.1002/qute.202100079

Citations: 5
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