Photoluminescence of nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond at room and higher temperatures
Authors: Sledz F., Piccolomo S., Flatae A.M., Lagomarsino S., Rechenberg R., Becker M.F., Sciortino S., Gelli N., Khramtsov I.A., Fedyanin D. Yu., Speranza G., Giuntini L., Agio M.
Autors Affiliation: Laboratory of Nano-Optics and Cμ, University of Siegen, Germany; Centro Materiali e Microsistemi, Fondazione Bruno Kessler, Italy; Istituto Nazionale di Fisica Nucleare, Sezione di Firenze, Italy; Fraunhofer USA Center Midwest, USA; Dipartimento di Fisica e Astronomia, University of Florence, Italy; Laboratory of Nanooptics and Plasmonics, Moscow Institute of Physics and Technology, Russian Federation; National Institute of Optics (INO), National Research Council (CNR), Italy
Abstract: Phosphorus-doped diamond is relevant for applications in sensing, optoelectronics and quantum photonics, since the unique optical properties of color centers in diamond can be combined with the n-type conductivity attained by the inclusion of phosphorus. Here, we investigate the photoluminescence signal of the nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond as a function of temperature starting from ambient conditions up to about 100◦ Celsius, focusing on the zero-phonon line (ZPL). We find that the wavelength and width of the ZPL of the two color centers exhibit a comparable dependence on tempera- ture, despite the strong difference in the photoluminescence spectra. Moreover, the temperature sensitivity of the ZPL of the silicon-vacancy center is not significantly affected by phosphorus-doping, as we infer by comparison with silicon-vacancy centers in optical-grade single-crystal diamond.
Journal/Review: NUOVO CIMENTO C
Volume: 44 Pages from: 106-1 to: 106-4