Silicon carbide for future intense luminosity nuclear physics investigations
Authors: Tudisco S., Altana C., Boscardin M., Calcagno L., Ciampi C., Cirrone GAP., Fazzi A., Giove D., Gorini G., Labate L., La Via F., Lanzalone G., Litrico G., Muoio A., Pasquali G., Puglia SMR., Rebai M., Ronchin S., Santangelo A., Scuderi V., Trifiro A., Zimbone M.
Autors Affiliation: INFN, LNS, Catania, Italy; Fdn Bruno Kessler FBK Trento, TIFPA, INFN, Natl Inst Nucl Phys, Trento, Italy; INFN, Sez Catania, Catania, Italy; Univ Catania, Dept Phys & Astron, Catania, Italy; Nazl Fis Nucl INFN, Sez Firenze, Sesto Fiorentino, Italy; Univ Firenze, Dipartimento Fis, Sesto Fiorentino, Italy; Politecn Milan, INFN, Dept Energy, Sez Milano, Milan, Italy; Univ Milano Bicocca, Dept Phys, Sez Milano Bicocca, INFN, Milan, Italy; CNR, INO, Pisa, Italy; CNR, Natl Res Council, IMM, Catania, Italy; Univ Enna Kore, Dept Engn & Architecture, Enna, Italy; Epitaxial Technol Ctr LPE, Catania, Italy; STMicroelectronics, Str Primosole, Catania, Italy; Univ Messina, Dipartimento Sci MIFT, Messina, Italy
Abstract: Silicon carbide (SiC) is one of the compound semiconductor which has been considered as a potential alternative to Silicon for the fabrication of radiation hard particles detectors. Material, detectors implementation and possible application in the future INFN projects has been discussed.
Journal/Review: NUOVO CIMENTO C-COLLOQUIA AND COMMUNICATIONS IN PHYSICS
Volume: 42 (2-3) Pages from: 74-1 to: 74-4
KeyWords: CROSS-SECTION; IRRADIATION; PROTON; RAYDOI: 10.1393/ncc/i2019-19074-1Citations: 3data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2021-07-25References taken from IsiWeb of Knowledge: (subscribers only)Connecting to view paper tab on IsiWeb: Click hereConnecting to view citations from IsiWeb: Click here