Silicon-vacancy color centers in phosphorus-doped diamond

Year: 2020

Authors: Flatae A.M., Lagomarsino S., Sledz F., Soltani N., Nicley S.S., Haenen K., Rechenberg R., Becker M.F., Sciortino S., Gelli N., Giuntini L., Taccetti F., Agio M.

Autors Affiliation: Laboratory of Nano-Optics and Cμ, University of Siegen, 57072 Siegen, Germany; Istituto Nazionale di Fisica Nucleare, Sezione di Firenze, 50019 Sesto Fiorentino, Italy; Institute for Materials Research (IMO) & IMOMEC, Hasselt University & IMEC vzw, 3590 Diepenbeek, Belgium; Department of Materials, University of Oxford, Parks Road, Oxford OX1 2PH, United Kingdom; Fraunhofer USA Center for Coatings and Diamond Technologies, East Lansing, MI 48824, USA; Dipartimento di Fisica e Astronomia, University of Florence, 50019 Sesto Fiorentino, Italy; National Institute of Optics (INO), National Research Council (CNR), 50125 Florence, Italy

Abstract: The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this study, we create SiV color centers in diamond samples with different phosphorus concentrations and show that the fluorescence background due to doping, nitrogen-impurities and ion implantation induced defects can be significantly suppressed. Single-photon emitters in phosphorus-doped diamond are obtained at low Si-ion implantation fluences.


Volume: 105      Pages from: 107797-1  to: 107797-7

KeyWords: diamond, diamond doping, silicon-vacancy centers
DOI: 10.1016/j.diamond.2020.107797

Citations: 9
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