Dynamics of single-photon emission from electrically pumped color centers

Year: 2017

Authors: Khramtsov I. A., Agio M., Fedyanin D. Y.

Autors Affiliation: Moscow Inst Phys & Technol, Lab Nanoopt & Plasmon, Dolgoprudnyi 141700, Russia; Univ Siegen, Lab Nanoopt, D-57072 Siegen, Germany; Natl Inst Opt CNR INO, I-50125 Florence, Italy; Ctr Quantum Sci & Technol Arcetri QSTAR, I-50125 Florence, Italy.

Abstract: Low-power, high-speed, and bright electrically driven true single-photon sources, which are able to operate at room temperature, are vital for the practical realization of quantum-communication networks and optical quantum computations. Color centers in semiconductors are currently the best candidates; however, in spite of their intensive study in the past decade, the behavior of color centers in electrically controlled systems is poorly understood. Here we present a physical model and establish a theoretical approach to address single-photon emission dynamics of electrically pumped color centers, which interprets experimental results. We support our analysis with self-consistent numerical simulations of a single-photon emitting diode based on a single nitrogen-vacancy center in diamond and predict the second-order autocorrelation function and other emission characteristics. Our theoretical findings demonstrate remarkable agreement with the experimental results and pave the way to the understanding of single-electron and single-photon processes in semiconductors.

Journal/Review: PHYSICAL REVIEW APPLIED

Volume: 8 (2)      Pages from: 024031-1  to: 024031-8

More Information: The work is supported by the Russian Foundation for Basic Research (Grants No. 16-37-00509-mol_a and No. 16-29-03432-ofi_m), by the grant of the President of the Russian Federation (Grant No. MK-2602.2017.9), by the Ministry of Education and Science of the Russian Federation (Grants No. 8.9898.2017/6.7 and No. 16.7162.2017/8.9), and by the COST Action MP1403 \”Nanoscale Quantum Optics.\”
KeyWords: CVD diamonds; Vacancies; Single nitrogen-vacancy ;N-type diamond; Phosphorus; Exciton; Silicon; Photoluminescence; Compensation; Boron
DOI: 10.1103/PhysRevApplied.8.024031

Citations: 24
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