High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires

Year: 2011

Authors: Jacopin G., Rigutti L., Bugallo A.D.L., Julien F.H., Baratto C., Comini E., Ferroni M., Tchernycheva M.

Autors Affiliation: Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France; Univ Brescia, CNR IDASC SENSOR Lab, Brescia, Italy

Abstract: We investigated the polarization dependence of the near-band-edge photoluminescence in ZnO strain-free nanowires grown by vapor phase technique. The emission is polarized perpendicular to the nanowire axis with a large polarization ratio (as high as 0.84 at 4.2 K and 0.63 at 300 K). The observed polarization ratio is explained in terms of selection rules for excitonic transitions derived from the k.p theory for ZnO. The temperature dependence of the polarization ratio evidences a gradual activation of the X(C) excitonic transition.

Journal/Review: NANOSCALE RESEARCH LETTERS

Volume: 6      Pages from: 501-1  to: 501-6

More Information: This work was supported by the French ANR agency under the programs ANR-08-NANO-031 BoNaFo and ANR-08-BLAN-0179 NanoPhotoNit.
KeyWords: Nanowire; Photoluminescence; Polarization; Zinc oxide
DOI: 10.1186/1556-276X-6-501

Citations: 16
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