Simultaneous Electrochemical Reduction and De lamination of Graphene Oxide Films

Year: 2015

Authors: Wang XH., Kholmanov I., Chou H., Ruoff RS.

Autors Affiliation: Univ Texas Austin, Mat Sci & Engn Program, Austin, TX 78712 USA; CNR INO Brescia, Sensor Lab, I-25123 Brescia, Italy; Ulsan Natl Inst Sci & Technol, Inst Basic Sci Ctr, Ctr Multidimens Carbon Mat, Ulsan 689798, South Korea.

Abstract: Here we report an electrochemical method to simultaneously reduce and delaminate graphene oxide (G-0) thin films deposited on metal (Al and Au) substrates. During the electrochemical reaction, interface charge transfer between the G-0 thin film and the electrode surface was found to be important in eliminating oxygen-containing groups, yielding highly reduced graphene oxide (rG-0). In the meantime, hydrogen bubbles were electrochemically generated at the rG-0 film/electrode interface, propagating the film delamination. Unlike other metal-based G-0 reduction methods, the metal used here was either not etched at all (for Au) or etched a small amount (for Al), thus making it possible to reuse the substrate and lower production costs. The delaminated rG-0 film exhibits a thickness-dependent degree of reduction: greater reduction is achieved in thinner films. The thin rG-0 films having an optical transmittance of 90% (lambda=550 nm) had a sheet resistance of 6390 +/- 447 Omega/square (ohms per square). rG-0-based stretchable transparent conducting films were also demonstrated.

Journal/Review: ACS NANO

Volume: 9 (9)      Pages from: 8737  to: 8743

More Information: We thank Prof. C. Grant Willson and Dr. Longjun Li for valuable discussions and manuscript revision. We thank Feng Lu for providing the Au electrode. We appreciate funding support from the National Science Foundation, under Project No. 1206986; NSF-NASCENT Engineering Research Center (Cooperative Agreement No. EEC-1160494); and the South West Academy of Nanoelectronics (SWAN 2.0, Grant 2013-NE-2400), a Semiconductor Research Corporation program.
KeyWords: graphene oxide; electrochemical reduction; transparent conducting films; stretchable electronics
DOI: 10.1021/acsnano.5b03814

Citations: 63
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