Scientific Results

Trapping properties and model for the deep-level center in Se-Doped AlxGa1-xAs

Year: 1988

Authors: OH E.G., HANNA M.C., LU Z.H., SZMYD D.M., LUCCHESINI A., MAJERFELD A.

Autors Affiliation: University of Colorado at Boulder, Boulder, CO, USA

Journal/Review: JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS

KeyWords: surface states, band structure; electron density of states;