Demonstration of an electrostatic-shielded cantilever
Year: 2006
Authors: Pingue P., Piazza V., Baschieri P., Ascoli C., Menozzi C., Alessandrini A., Facci P.
Autors Affiliation: NEST CNR-INFM and Scuola Normale Superiore, I-56100 Pisa, Italy;
IPCF and CNR, I-56100 Pisa, Italy;
S3-INFM-CNR—Via Campi 213/A, I-41100 Modena, Italy
Abstract: The fabrication and performances of cantilevered probes with reduced parasitic capacitance starting from a commercial Si3N4 cantilever chip is presented. Nanomachining and metal deposition induced by focused ion beam techniques were employed in order to modify the original insulating pyramidal tip and insert a conducting metallic tip. Two parallel metallic electrodes deposited on the original cantilever arms are employed for tip biasing and as ground plane in order to minimize the electrostatic force due to the capacitive interaction between cantilever and sample surface. Excitation spectra and force-to-distance characterization are shown with different electrode configurations. Applications of this scheme in electrostatic force microscopy, Kelvin probe microscopy and local anodic oxidation is discussed. (c) 2006 American Institute of Physics.
Journal/Review: APPLIED PHYSICS LETTERS
Volume: 88 (4) Pages from: 043510-1 to: 043510-3
KeyWords: fDOI: 10.1063/1.2168247Citations: 14data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2024-11-17References taken from IsiWeb of Knowledge: (subscribers only)Connecting to view paper tab on IsiWeb: Click hereConnecting to view citations from IsiWeb: Click here