Bias-induced threshold voltages shifts in thin-film organic transistors

Year: 2004

Authors: Gomes H.L., Stallinga P., Dinelli F., Murgia M., Biscarini F., De Leeuw D. M., Muck T., Geurts J., Molenkamp L.W., Wagner V.

Autors Affiliation: Univ Algarve, Fac Sci & Technol, P-8000 Faro, Portugal; CNR, Ist Studio Mat Nanostrutturati, I-40129 Bologna, Italy; Philips Res, NL-5656 AA Eindhoven, Netherlands; Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany; Int Univ Bremen, Sch Sci & Engn, D-28759 Bremen, Germany

Abstract: An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin-film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at Tapproximate to220 K and the other at Tapproximate to300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and processing parameters. (C) 2004 American Institute of Physics.

Journal/Review: APPLIED PHYSICS LETTERS

Volume: 84 (16)      Pages from: 3184  to: 3186

KeyWords: a
DOI: 10.1063/1.1713035

Citations: 180
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