LiNbO3 and AlGaAs on-insulator platforms for second-harmonic generation: Comparison and perspectives
Year: 2025
Authors: Haines J., Naik P.U., Guasoni M., Gandolfi M.
Autors Affiliation: Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, England; Univ Brescia, Dipartimento Ingn Informaz, Via Branze 38, I-251238 Brescia, Italy; CNR, Ist Nazl Ott, Via Branze 38, I-25123 Brescia, Italy; Consorzio Nazl Interuniv Telecomunicazioni CNIT, Viale GP Usberti 181-A Sede11 Sci Ingn Palazzina 3, I-43124 Parma, Italy.
Abstract: The rise of aluminum gallium arsenide on-insulator (AlGaAsOI) and lithium niobate on-insulator (LNOI) platforms presents new opportunities for advancing on-chip and ultracompact nonlinear photonic devices. In this study, we investigate theoretically and via numerical simulations second-harmonic generation (SHG) in AlGaAsOI and LNOI waveguides across a wide range of pulse widths, from the subpicosecond to the continuous- wave regime, and peak power levels spanning from milliwatts to hundreds of watts. Our research aims to identify optimal time and power regimes for achieving high SHG conversion efficiency, exploring the detrimental impact of linear and nonlinear losses as well as dispersion effects. Additionally, we assess the performance of SHG against manufacturing errors and surface roughness, comparing our findings with state-of-the-art solutions. These results offer insights into the robustness and potential applications of SHG in these advanced photonic platforms.
Journal/Review: PHYSICAL REVIEW A
Volume: 111 (1) Pages from: 13515-1 to: 13515-12
More Information: Engineering and Physical Sciences Research Council (EP/T019441/1). European Research Council (802682). British Council UKIERI (IND/CONT/G/23-24/36).KeyWords: Difference-frequency-generation; Laser-induced Damage; Lithium-niobate; Wavelength Conversion; Refractive-index; Wave-guides; Mu-m; Coefficients; Absorption; CrystalsDOI: 10.1103/PhysRevA.111.013515