Cross-gain modulation in broad-area vertical-cavity semiconductor optical amplifier

Year: 2005

Authors: Marino F., Furfaro L., Balle S.

Autors Affiliation: Univ Illes Balears, CSIC, Inst Mediterrani Estudis Avancats, E-07071 Palma de Mallorca, Spain.

Abstract: We demonstrate that broad-area vertical-cavity semiconductor optical amplifiers allow for wavelength conversion at 2.5 Gb/s via cross-gain modulation (XGM). XGM is reached with a saturation beam of only 1.5 mW over an optical bandwidth of 0.7 nm (215 GHz). Depending on the wavelengths of the injected fields, inverted or noninverted output can be obtained. (C) 2005 American Institute of’Physics.

Journal/Review: APPLIED PHYSICS LETTERS

Volume: 86 (15)      Pages from: 151116-1  to: 151116-3

More Information: he authors acknowledge financial support from MCYT (Spain) through Project No. TIC2002-04255-C04-03. They also thank Ulm University for providing the device in the framework of the project VISTA and the Institut Non Lineaire de Nice for supplying the electro-optical modulator.
KeyWords: Surface-emitting Lasers; Wavelength Conversion
DOI: 10.1063/1.1905811

Citations: 16
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