Sequential physical vapor deposition and chemical vapor deposition for the growth of In2O3-SnO2 radial and longitudinal heterojunctions

Year: 2014

Authors: Vomiero A., Ferroni M., Natile M.M., Fischer T., Fiz R., Mathur S., Sberveglieri G.

Autors Affiliation: CNR INO, SENSOR Lab, I-25123 Brescia, Italy; Univ Brescia, Dept Informat Engn & Mat, SENSOR Lab, I-25133 Brescia, Italy; CNR IENI, I-35131 Padua, Italy; Univ Padua, Dept Chem Sci, I-35131 Padua, Italy; Univ Cologne, Inst Inorgan Chem, D-50939 Cologne, Germany.

Abstract: Heterostructures of In2O3 and SnO2 were produced by sequential application of the physical- and chemical-vapor deposition techniques usually adopted for nanowire fabrication. In2O3 nanowires exhibit a single crystal body-centered cubic structure oriented along the [1 0 0] direction and grow epitaxially on alpha-sapphire substrate by means of a transport and condensation method assisted by Au nanoparticles. Nucleation and growth occurred via direct vapor solid (VS) mechanism competing with catalyst-mediated vapor-liquid-solid (VLS). SnO2 nanowires were obtained in a single crystal tetragonal (cassiterite) structure and oriented along the [1 0 1] direction, the growth being promoted by the gold particle at the apex of the In2O3 nanowires. The size of the catalyst thereby determines the main morphological features of SnO2 wires. CVD deposition allows precise control of the geometrical features of the heterojunction, also limiting detrimental nucleation of SnO2 on the lateral sides of In2O3 nanowires due to lower longitudinal growth rate. These results can help in improving the ability of finely tuning the morphological and structural properties of heterostructured oxide nanocrystals. (C) 2014 Elsevier B.V. All rights reserved.

Journal/Review: APPLIED SURFACE SCIENCE

Volume: 323      Pages from: 59  to: 64

More Information: The authors acknowledge the European Commission for partial funding under the contract WIROX no. 295216. A.V. would like to acknowledge the European Commission for partial funding under the contract F-Light Marie Curie no. 299490. S.M. is thankful to the University of Cologne for providing the necessary financial support.
KeyWords: Indium oxide and tin oxide nanowires; Heterojunctions; Physical vapor deposition; Chemical vapor deposition
DOI: 10.1016/j.apsusc.2014.07.177

Citations: 7
data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2024-11-17
References taken from IsiWeb of Knowledge: (subscribers only)
Connecting to view paper tab on IsiWeb: Click here
Connecting to view citations from IsiWeb: Click here