Ge growth on porous silicon: The effect of buffer porosity on the epilayer crystalline quality

Year: 2014

Authors: Calabrese G., Baricordi S., Bernardoni P., De Salvador D., Ferroni M., Guidi V., Morandi V., Vincenzi D.

Autors Affiliation: Univ Ferrara, Dept Phys & Earth Sci, I-44122 Ferrara, Italy; Univ Padua, Dept Phys & Astron, I-35131 Padua, Italy; Univ Brescia, Dept Informat Engn, Sensor Lab, CNR,INO, I-25123 Brescia, Italy; CNR, IMM, I-40129 Bologna, Italy.

Abstract: We report on the epitaxial growth of Ge virtual substrates directly on Si (001) and on different porosity porous silicon (pSi) buffers. Obtained results indicate that Ge grown on low porosity (22%) pSi buffer has a better crystalline quality compared to Ge grown on bulk Si and on higher porosity buffers. This result is attributed to the compliant nature of pSi and to its reduced Young’s modulus, which leads to plastic tensile deformation of the 22% porosity buffer under the in-plane tensile stress introduced by Ge lattice. The same result is not observed for higher porosity buffers, this effect being attributed to the higher buffer fragility. A low porosity pSi layer can hence be used as buffer for the growth of Ge on Si virtual substrates with reduced dislocation content and for the growth of Ge based devices or the successive integration of III-V semiconductors on Si. (C) 2014 AIP Publishing LLC.

Journal/Review: APPLIED PHYSICS LETTERS

Volume: 105 (12)      Pages from: 122104-1  to: 122104-5

More Information: The project has been partly developed in partnership with Dichroic Cell Srl. The authors also acknowledge IQE Silicon Compounds Ltd for the support in this research project.
KeyWords: Strain Relaxation; Sige Layers; Seed Layer; Germanium; Gaas; Heterostructures; Deposition; Hydrogen; Si(100)
DOI: 10.1063/1.4894863

Citations: 11
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