Torus breakdown in a two-stroke relaxation memristor

Year: 2021

Authors: Ginoux JM., Meucci R., Euzzor S., Di Garbo A.

Autors Affiliation: Aix Marseille Univ, Univ Toulon, CPT, CNRS, Marseille, France; CNR, Ist Nazl Ottica, Largo E Fermi 6, I-50125 Florence, Italy; CNR, Ist Biofis, Via G Moruzzi 1, I-56124 Pisa, Italy.

Abstract: Experimental study of a two stroke relaxation oscillator (TSO) has enabled to show that this electronic component has the same features as the so-called memristor. So, we have used the memristor’s direct current (DC) v(M) – i(M) characteristic for modeling the TSO’s DC current-voltage characteristic. This led us to confirm on one hand, that the TSO is a memristor and, on the other hand to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown. (C) 2021 Elsevier Ltd. All rights reserved.

Journal/Review: CHAOS SOLITONS & FRACTALS

Volume: 153      Pages from: 111594-1  to: 111594-10

KeyWords: Two stroke oscillator; Memristor; Uni junction transistor; Torus breakdown; Relaxation and chaotic oscillators
DOI: 10.1016/j.chaos.2021.111594

Citations: 5
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