Single-photon emission from silicon-vacancy color centers in polycrystalline diamond membranes

Year: 2024

Authors: Flatae AM., Sledz F., Kambalathmana H., Lagomarsino S., Wang HC., Gelli N., Sciortino S., Woerner E., Wild C., Butz B., Agio M.

Autors Affiliation: Univ Siegen, Lab Nanoopt, D-57072 Siegen, Germany; Univ Siegen, Cu Res Ctr Micro & Nanochem & Bio Technol, D-57068 Siegen, Germany; Ist Nazl Fis Nucl, Sez Firenze, I-50019 Sesto Fiorentino, Italy; Univ Siegen, Micro & Nanoanalyt Grp, D-57076 Siegen, Germany; Ruhr Univ Bochum, Inst Mat, D-44801 Bochum, Germany; Univ Florence, Dept Phys & Astron, I-50019 Sesto Fiorentino, Italy; Natl Res Council CNR, Natl Inst Opt INO, I-50125 Florence, Italy; Diamond Mat GmbH, D-79108 Freiburg, Germany.

Abstract: Single-color centers in thin polycrystalline diamond membranes allow the platform to be used in integrated quantum photonics, hybrid quantum systems, and other complex functional materials. While single-crystal diamond membranes are still technologically challenging to fabricate as they cannot be grown on a non-diamond substrate, free-standing polycrystalline diamond membranes can be conveniently fabricated at large-scale from nanocrystalline diamond seeds on a substrate that can be selectively etched. However, their practical application for quantum photonics is so far limited by crystallographic defects, impurities, graphitic grain boundaries, small grain sizes, scattering loss, and strain. In this paper, we report on a single-photon source based on silicon-vacancy color centers in a polycrystalline diamond membrane. We discuss the spectroscopic approach and quantify the photon statistics, obtaining a g(2)(0) approximate to 0.04. Our findings hold promise for introducing polycrystalline diamond to quantum photonics and hybrid quantum systems.

Journal/Review: APPLIED PHYSICS LETTERS

Volume: 124 (9)      Pages from: 94001-1  to: 94001-5

More Information: The authors gratefully acknowledge financial support from the University of Siegen and the German Research Foundation (DFG) (INST 221/118-1 FUGG, 410405168). A.M.F. would like to thank F. Tantussi and F. De Angelis from the Italian Institute of Technology, Genoa, for instrumentation. B.B. and H.W. acknowledge the access to the infrastructure of MNaF (Talso F200X TEM) at the University of Siegen and ZGH (Helios G4 CX FIB) at the Ruhr University Bochum.
KeyWords: Optical-properties; Luminescence; Fabrication; Stress; Films
DOI: 10.1063/5.0191665

Citations: 1
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