Optical properties of silicon-implanted polycrystalline diamond membranes

Year: 2020

Authors: Kambalathmana H., Flatae AM., Hunold L., Sledz F., M’ller J., Hepp M., Schmuki P., Killian MS., Lagomarsino S., Gelli N., Sciortino S., Giuntini L., Wtzrner E., Wild C., Butz B., Agio M.

Autors Affiliation: Laboratory of Nano-Optics, University of Siegen, Siegen, 57072, Germany; Center for Micro- and Nanochemistry and Engineering (C?), University of Siegen, Siegen, 57068, Germany; Micro- and Nanoanalytics Group, University of Siegen, Siegen, 57076, Germany; Chair for Surface Science and Corrosion, FAU Erlangen, Erlangen, 91058, Germany; Chemistry and Structure of Novel Materials, University of Siegen, Siegen, 57076, Germany; Istituto Nazionale di Fisica Nucleare, Sezione di Firenze, Sesto Fiorentino, 50019, Italy; Department of Physics and Astronomy, University of Florence, Sesto Fiorentino, 50019, Italy; Diamond Materials GmbH, Freiburg, 79108, Germany; National Institute of Optics (INO), National Research Council (CNR), Florence, 50125, Italy

Abstract: We investigate the optical properties of polycrystalline diamond membranes containing silicon-vacancy (SiV) color centers in combination with other nano-analytical techniques. We analyze the correlation between the Raman signal, the SiV emission, and the background luminescence in the crystalline grains and in the grain boundaries, identifying conditions for the addressability of single SiV centers. Moreover, we perform a scanning transmission electron microscopy (STEM) analysis, which associates the microscopic structure of the membranes and the evolution of the diamond crystals along the growth direction with the photoluminescence properties, as well as a time-of-flight secondary ion mass spectrometry (ToF-SIMS) to address the distribution of Si in implanted and un-implanted membranes. The results of the STEM and ToF-SIMS studies are consistent with the outcome of the optical measurements and provide useful insight into the preparation of polycrystalline samples for quantum nano-optics. (C) 2020 Elsevier Ltd. All rights reserved.

Journal/Review: CARBON

Volume: 174      Pages from: 295  to: 304

More Information: The authors gratefully acknowledge financial support from the University of Siegen and the German Research Foundation (DFG) (INST 221/118-1 FUGG, 410405168). The authors also acknowledge INFN-CHNet, the network of laboratories of the INFN for cultural heritage, for support and precious contributions in terms of instrumentation and personnel. S. Lagomarsino, N. Gelli, S. Sciortino, and L. Giuntini wish to thank F. Taccetti for experimental assistance and suggestions. H. Kambalathmana acknowledges support from P. Reuschel and N. Soltani. M.S. Killian would like to thank C. Hasenest for depth calibration assistance. M. Agio would like to thank C. Becher and H. Galal for helpful discussions. This work is based upon networking from the COST Action MP 1403 Nanoscale Quantum Optics, supported by COST (European Cooperation in Science and Technology). Part of this work was performed at the Micro-and Nanoanalytics Facility (MNaF) of the University of Siegen.
KeyWords: CVD diamond Films; Ion implantation; Silicon-vacancy center; Spectroscopy and confocal mapping; STEM analysis; ToF-SIMS analysis
DOI: 10.1016/j.carbon.2020.12.031

Citations: 8
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