Light-Assisted Resistance Collapse in a V2O3-Based Mott-Insulator Device
Year: 2021
Authors: Ronchi A., Franceschini P., Homm P., Gandolfi M., Ferrini G., Pagliara S., Banfi F., Menghini M., Locquet J-P, Giannetti C.
Autors Affiliation: Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, Belgium; Univ Cattolica Sacro Cuore, Dept Math & Phys, I-25121 Brescia, Italy; Univ Cattolica Sacro Cuore, ILAMP Interdisciplinary Labs Adv Mat Phys, I-25121 Brescia, Italy; CNR INO, Via Branze 45, I-25123 Brescia, Italy; Univ Brescia, Dept Informat Engn, Via Branze 38, I-25123 Brescia, Italy; Univ Lyon 1, Inst Lumiere Matiere iLM, Univ Lyon, 10 Rue Ada Byron, F-69622 Villeurbanne, France; CNRS, 10 Rue Ada Byron, F-69622 Villeurbanne, France; IMDEA Nanociencia, Madrid 28049, Spain.
Abstract: The insulator-to-metal transition in Mott insulators is the key mechanism for most of the electronic devices belonging to the Mottronics family. Intense research efforts are currently devoted to the development of specific control protocols, usually based on the application of voltage, strain, pressure, and light excitation. The ultimate goal is to achieve the complete control of the electronic phase transformation, with dramatic impact on the performance, for example, of resistive-switching devices. Here, we investigate the simultaneous effect of external voltage and excitation by ultrashort light pulses on a single Mottronic device based on a V2O3 epitaxial thin film. The experiments are supported by both finiteelement simulations of the thermal problem and a simpler lumped-element model. The thermal models are benchmarked against results obtained at very low applied voltage (AV = 5 mV). When the voltage is significantly increased (AV = 0.5 V), but still in the linear below-switching-threshold region, our results show that the light excitation drives a volatile resistivity drop, which goes beyond the combined effect of laser and Joule heating. Our results impact on the development of protocols for the nonthermal control of the resistive-switching transition in correlated materials.
Journal/Review: PHYSICAL REVIEW APPLIED
Volume: 15 (4) Pages from: 044023-1 to: 044023-9
More Information: C.G., A.R., and P.F. acknowledge Andrea Tognazzi for the support in the development of the experimental setup. C.G. and A.R. acknowledge Dr. Alessandro Bau and Professor Vittorio Ferrari (Information Engeenering Department, Universite degli Studi di Brescia) for thesupport given during the wirebonding of the device. We thank Frederik Ceyssens for his help with the fabrication of electrical contacts on the samples. C.G., A.R., and P.F. acknowledge financial support from MIUR through the PRIN 2017 program (Prot. 20172H2SC4_005) . G.F. and C.G. acknowledge support from Universite Cattolica del Sacro Cuore through D.1, D.2.2, and D.3.1 Grants. F.B. acknowledges financial support from Universite de Lyon in the frame of the IDEXLYON ProjectProgramme Investissements dŽAvenir (ANR-16-IDEX-0005) and from Universite Claude Bernard Lyon 1 thorugh the BQR Accueil EC 2019 Grant. P.H., M.M., and J.-P.L. acknowledge support from EU-H2020-ICT-2015 PHRESCO Project, Grant Agreement No. 688579. P.H. acknowledges support from Becas ChileCONICYT. M.G. acknowledges financial support from the CNR Joint Laboratories program 20192021.KeyWords: thermal-conductivity; critical-behavior; transitionDOI: 10.1103/PhysRevApplied.15.044023Citations: 13data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2024-11-17References taken from IsiWeb of Knowledge: (subscribers only)Connecting to view paper tab on IsiWeb: Click hereConnecting to view citations from IsiWeb: Click here