3D versus 2D Electrolyte-Semiconductor Interfaces in Rylenediimide-Based Electron-Transporting Water-Gated Organic Field-Effect Transistors

Year: 2020

Authors: Prescimone F., Benvenuti E., Natali M., Lorenzoni A., Dinelli F., Liscio F., Milita S., Chen ZH., Mercuri F., Muccini M., Facchetti A., Toffanin S.

Autors Affiliation: CNR, Ist Studio Mat Nanostrutturati ISMN, Via Gobetti 101, I-40129 Bologna, Italy; CNR, Ist Nazl Ott INO, Via Giuseppe Moruzzi 1, I-56127 Pisa, Italy; CNR, Ist Microelettron & Microsistemi IMM, Via Gobetti 101, I-40129 Bologna, Italy; Flexterra Inc, 8045 Lamon Ave, Skokie, IL 60077 USA; Northwestern Univ, Dept Chem, 633 Clark St, Evanston, IL 60208 USA; Northwestern Univ, Mat Res Ctr, 633 Clark St, Evanston, IL 60208 USA.

Abstract: Water-gated organic field-effect transistors (WGOFETs) are relevant devices for use in the fields of biosensors and biosystems. However, real applications require very stringent performance in terms of electrochemical stability and charge mobility to the organic semiconductor in contact with an aqueous environment. Here, a comparative study of two small-molecule electron-transporting perylenediimide semiconductors, which differ only in the N-substituents named PDIF-CN2 and PDI8-CN2 is reported. The two materials present similar solid-state arrangements but, while the PDI8-CN2 shows a more 3D growth modality and electron mobility independent of the semiconductor layer thickness (approximate to 10(-4) cm(2) V-1 s(-1)), the PDIF-CN2 has an almost-2D growth modality and the mobility increases with the semiconductor film thickness, reaching a maximum value of approximate to 5 x 10(-3) cm(2) V-1 s(-1) at 30 nm. Above this thickness, the PDIF-CN2 switches to a more 3D growth modality, and the mobility drops by one order of magnitude. XRR analysis indicates that a PDIF-CN2 film can be modeled as a dense layered structure in which each layer is decoupled from the others due to the presence of fluorocarbon-chains. The availability of additional pathways for charge transport from buried layers and the 2D versus 3D growth can explain the mobility dependence on the film thickness.

Journal/Review: ADVANCED ELECTRONIC MATERIALS

Volume: 6 (12)      Pages from: 2000638-1  to: 2000638-10

More Information: This work received funding from European Union´s Horizon 2020 research and innovation program under grant agreement No.780839 (MOLOKO project). In addition, the authors wish to thank Vincenzo Ragona for the technical support. A.F. thanks AFOSR (FA9550-18-1-0320) for support.
KeyWords: electron‐ transporting semiconductors; field‐ effect mobility; growth modalities; rylene diimide; water‐ gated‐ organic field‐ effect transistors
DOI: 10.1002/aelm.202000638

Citations: 2
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