Electric field profiling by current transients in silicon diodes

Year: 2002

Authors: Menichelli D., Serafini D., Borchi E., Toci G.

Autors Affiliation: Dipartimento di Energetica, Universitą di Firenze, Via S. Marta 3, 50139 Firenze, Italy; INFN Firenze, Largo E. Fermi 2, Firenze, Italy; INFM Firenze, Largo E. Fermi 2, Firenze, Italy; Istituto di Elettronica Quantistica – CNR, Via Panciatichi 53/56, Firenze, Italy; Departimento di Energetica, INFN Firenze, S. Stecco, Via S. Marta 3, 50139 Firenze, Italy

Abstract: A novel method, suitable to evaluate the electric field distribution in the space charge region of silicon diodes directly from the measurement of their pulse current response, is proposed. A Transient Current Technique experimental setup, based on a nano-second UV laser, is used for this purpose. It is shown that the problem of solving the basic equations, connecting the current response to the electric field distribution, can be expressed by a linear integral equation. An iterative mathematical procedure is used to obtain the solution, and a spatial resolution of about 10µm, comparable to the accuracy obtainable from other commonly used techniques, is deduced from the numerical tests. A preliminary analysis of measured data has also been carried out; the results are encouraging, but they point out that a refinement of the transport model is needed to reach a satisfactorily practical applicability.

Journal/Review: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

Volume: 476 (3)      Pages from: 614  to: 620

KeyWords: Electric currents; Electric field effects; Electric space charge; Electron transport properties; Integral equations; Iterative methods; Linear equations; Radiation damage; Semiconducting silicon; Silicon sensors, Electric field distributions; Silicon diodes, Semiconductor diodes
DOI: 10.1016/S0168-9002(01)01656-4

Citations: 6
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