Mixed mode oscillations and chaotic spiking in Quantum Dot Light Emitting Diodes
Autori: Al Naimee K., Al Husseini H., Abdalah S.F., Al Khursan A., Khedir A.H., Meucci R., Arecchi F.T.
Affiliazione autori: Istituto Nazionale di Ottica- CNR, Largo E. Fermi 6, Firenze, 50125, Italy; Dept. of Physics, College of Science, University of Baghdad, Al Jadiriyah, Baghdad, Iraq; Nassiriya Nanotechnology Research Laboratory (NNRL), Science College, Thi-Qar University, Nassiriya, Iraq
Abstract: We report both experimentally and theoretically the appearance of Mixed Mode Oscillations and chaotic spiking in Quantum Dot Light Emitting Diode. The proposed dimensionless model exhibits homoclinic chaos Furthermore, it is also able to reproduce Mixed Mode Oscillations and chaotic spiking regimes. The chaotic dynamics is completely determined by the variation of the injecting bias current and modulating current of the carrier in the wetting layer, as evidenced by means of the modulation depth of the system and bifurcation diagram. The influence of the injecting current on the transition between Mixed Mode Oscillations and chaos has been also investigated.
Parole chiavi: Chaos theory; Control; Nanocrystals; Oscillators (mechanical); Semiconductor quantum dots, Bifurcation diagram; Chaotic dynamics; Dimensionless models; Homoclinic chaos; Mixed mode oscillations; Modulation depth; Quantum-dot light emitting diodes; Wetting layer, Light emitting diodesDOI: 10.1109/CompEng.2014.6994684