InGaN/GaN multiple quantum well for superfast scintillation application: Photoluminescence measurements of the picosecond rise time and excitation density effect

Anno: 2019

Autori: Toci G., Gizzi L.A., Koester P., Baffigi F., Fulgentini L., Labate L., Hospodkova A., Jary V., Nikl M., Vannini M.

Affiliazione autori: Istituto Nazionale di Ottica – Consiglio Nazionale delle Ricerche CNR-INO Sede di Sesto Fiorentino, Via Madonna del Piano 10, Sesto Fiorentino, FI 50019, Italy; Istituto Nazionale di Fisica Nucleare, Sezione di Firenze, Via Giovanni Sansone 1, Sesto Fiorentino, FI 50019, Italy; Intense Laser Irradiation Laboratory, Istituto Nazionale di Ottica – Consiglio Nazionale delle Ricerche, CNR-INO, Sede di Pisa, Via Moruzzi 1, Pisa, 56124, Italy; Istituto Nazionale di Fisica Nucleare, Sezione di Pisa, Largo Bruno Pontecorvo 3, Pisa, 56127, Italy; Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, Prague, 16200, Czech Republic

Abstract: We report the study of the fast rise time and decay time in the ps time scale of the excitonic luminescence of a multiple quantum well (MQW) heterostructure of InGaN/GaN, including the excitation density effect. These structures were proposed as ultrafast scintillators for soft X-ray detectors and particle beam diagnostics. Measurements were carried out with a Hadland Imacon 500 streak camera following excitation of the sample by laser pulses of few tens of µJ at 266 nm and 400 nm, with pulse duration less than 200 fs. The rise time of the detected MWQ luminescence was less than 10 ps, with a possible contribution from the detection system and signal collection geometry. The calibration and the signal processing techniques employed to fully exploit the time resolution of the detection system are also described.


Volume: 208      Da Pagina: 119  A: 124

Maggiori informazioni: 631 08.08.2016. 16-15569S. College of Natural Resources, University of California Berkeley, CNR. European Cooperation in Science and Technology, FAST TD1401. – Financial support of Czech National Foundation grant no. 16-15569S and European project COST, FAST TD1401 are gratefully acknowledged. We also acknowledge funding from the CNR funded Italian research Network ELI-Italy (D.M. n. 631 08.08.2016 ).
Parole chiavi: e da rivista: III-V semiconductors; Laser excitation; Luminescence; Modulators; Phosphors; Quantum well lasers; Scintillation counters; Signal processing; Streak cameras; X ray detectors; X rays, Excitonic luminescence; InGaN/GaN; Particle beam diagnostics; Photoluminescence measurements; Scintillation applications; Signal processing technique; Soft x-ray detectors; Ultra-fast rise time, Semiconductor quantum wells
DOI: 10.1016/j.jlumin.2018.12.034

Citazioni: 3
dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2022-08-14
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