Highly Ordered Organic Ferroelectric DIPAB-Patterned Thin Films

Anno: 2017

Autori: Bergenti I., Ruani G., Liscio F., Milita S., Dinelli F., Xu X., Wang E., Cavallini M.

Affiliazione autori: CNR-ISMN, via Gobetti, 101, Bologna, 40129, Italy; CNR-IMM, via Gobetti, 101, Bologna, 40129, Italy; CNR-INO, via Moruzzi 1, Pisa, 56124, Italy; Chalmers University of Technology, Gothenburg, SE-412 96, Sweden

Abstract: Ferroelectric molecular compounds present great advantages for application in electronics because they combine high polarization values, comparable to those of inorganic materials, with the flexibility and low-cost properties of organic ones. However, some limitations to their applicability are related to the high crystallinity required to deploy ferroelectricity. In this article, highly ordered ferroelectric patterned thin films of diisopropylammonium bromide have been successfully fabricated by a lithographically controlled wetting technique. Confinement favors the self-organization of ferroelectric crystals, avoiding the formation of polymorphs and promoting the long-range orientation of crystallographic axes. Patterned structures present high stability, and the polarization can be switched to be arranged in stable domain pattern for application in devices.

Giornale/Rivista: LANGMUIR

Volume: 33 (45)      Da Pagina: 12859  A: 12864

Maggiori informazioni: Svenska Forskningsrådet Formas. Vetenskapsrådet, VR. – E.W. acknowledges the Swedish Research Council and the Swedish Research Council Formas for financial support.
Parole chiavi: Molecular ferroelectric; DIPAB; lithographically controlled wetting
DOI: 10.1021/acs.langmuir.7b02102

Citazioni: 10
dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2022-06-26
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