Risultati scientifici

Deep level traps in Se-doped MOCVD AlxGa1-xAs

Anno: 1987

Autori: HANNA M.C., OH E.G., SZMYD D.M., LUCCHESINI A., MAJERFELD A.

Affiliazione autori: University of Colorado at Boulder, Boulder, CO USA

Giornale/Rivista:

Parole chiavi: impurity and defect levels; III-V semiconductors;

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