Modulating the thickness of the resist pattern for controlling size and depth of submicron reversed domains in lithium niobate
Anno: 2006
Autori: Ferraro P., Grilli S.
Affiliazione autori: CNR – Istituto Nazionale di Ottica Applicata (INOA) del CNR, Via Campi Flegrei 34, 80078 Pozzuoli (NA), Italy
Abstract: In this letter the electric field overpoling is used in combination with two-dimensional resist gratings exhibiting modulated topography and obtained by moire interference lithography. The technique allows one to fabricate shallow submicron domains with lateral size and depth modulated according to the resist profile. Simulations of the electric field distribution in the crystal, in this specific poling configuration, are performed to interpret the mechanism leading to the formation of those surface domains. The results show that in principle complex domain structures could be designed for applications in the field of photonic crystals. (c) 2006 American Institute of Physics.
Giornale/Rivista: APPLIED PHYSICS LETTERS
Volume: 89 (13) Da Pagina: 133111-1 A: 133111-3
Parole chiavi: lithium niobate; interference lithography; electric field polingDOI: 10.1063/1.2357928Citazioni: 17dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2024-04-28Riferimenti tratti da Isi Web of Knowledge: (solo abbonati) Link per visualizzare la scheda su IsiWeb: Clicca quiLink per visualizzare la citazioni su IsiWeb: Clicca qui