Surface and interface effects on the current-voltage characteristic curves of multiwall carbon nanotube-Si hybrid junctions selectively probed through exposure to HF vapors and ppm-NO2
Anno: 2021
Autori: Freddi S.; Casotto A.; Drera G.; Tognazzi A.; Freddi T.; Pagliara S.; De Nicola F.; Castrucci P.; Sangaletti L.
Affiliazione autori: Univ Cattolica Sacro Cuore, Surface Sci & Spect Lab I Lamp, Dipartimento Matemat & Fis, Via Musei 41, I-25121 Brescia, Italy; Katholieke Univ Leuven, Div Mol Imaging & Photon, Dept Chem, Celestijnenlaan 200F, B-3001 Leuven, Belgium; Univ Brescia, Dipartimento Ingn Informaz, Via Branze 38, I-25123 Brescia, Italy; CNR, INO Ist Nazl Ott, Via Branze 45, I-25123 Brescia, Italy; Univ Roma Tor Vergata, Dipartimento Fis, Via Ric Sci, I-00133 Rome, Italy.
Abstract: The possibility to increase the efficiency of photovoltaic (PV) cells based on hybrid carbon nanotube (CNT)-Si heterojunctions is related to the ability to control the chemical properties of the CNT-Si interface and of the CNT bundle layer. In spite of the encouraging performances of PV cells based on multiwall (MW) CNT, so far few efforts have been made in the study of this device compared to single wall (SW) CNT-Si interfaces. Here, surface and interface effects on the current-voltage characteristic curves of MW CNT-Si hybrid junctions are investigated through exposure to HF vapors and to 10 ppm-NO2 and compared to the effects detected in SW CNT-Si junctions. Quite similar results in terms of open circuit voltage, short circuit current density, and efficiency are found for both cells, suggesting that exposure to HF vapors mostly affects the interface chemical properties, i.e., the silicon oxidation state, that in both junctions reach an optimal state about 50 h after etching. In turn, NO2 exposure has larger effects on the SW-based cell, consistently with the larger surface-to-volume ratio of SW with respect to MW. In both cases, the efficiency value reaches a maximum after 28 min, before dropping when the NO2 molecules desorb from the surface. A combined analysis of current-voltage curves and photoemission data collected along the different phases of gas exposures allowed us to relate changes in the electrical properties to the chemistry of Si at the interface.
Giornale/Rivista: JOURNAL OF APPLIED PHYSICS
Volume: 129 (5) Da Pagina: 055306-1 A: 055306-11
Parole chiavi: heterojunction solar-cells; record efficiency; silicon; spectroscopy; growth; oxide: airDOI: 10.1063/5.0033552Citazioni: 3dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2024-10-20Riferimenti tratti da Isi Web of Knowledge: (solo abbonati) Link per visualizzare la scheda su IsiWeb: Clicca quiLink per visualizzare la citazioni su IsiWeb: Clicca qui