Immunity of intersubband polaritons to inhomogeneous broadening

Anno: 2017

Autori: Manceau JM., Biasiol G., Tran NL., Carusotto I., Colombelli R.

Affiliazione autori: Univ Paris Saclay, Univ Paris Sud, Ctr Nanosci & Nanotechnol, C2N Orsay,CNRS,UMR 9001, F-91405 Orsay, France;‎ CNR IOM, Lab TASC, Area Sci Pk,SS 14 Km 163-5 Basovizza, I-34149 Trieste, Italy;‎ Univ Trento, BEC Ctr, INO CNR, I-38123 Povo, Italy;‎ Univ Trento, Dipartimento Fis, I-38123 Povo, Italy

Abstract: We demonstrate that intersubband (ISB) polaritons are robust to inhomogeneous effects originating from the presence of multiple quantum wells (MQWs). In a series of samples that exhibit mid-infrared ISB absorption transitions with broadenings varying by a factor of 5 (from 4 to 20 meV), we observed polariton linewidths always lying in the 4 to 7 meV range only. We experimentally verified the dominantly inhomogeneous origin of the broadening of the ISB transition, and that the linewidth reduction effect of the polariton modes persists up to room-temperature. This immunity to inhomogeneous broadening is a direct consequence of the coupling of the large number of ISB oscillators to a single photonic mode. It is a precious tool to gauge the natural linewidth of the ISB plasmon that is otherwise masked in such MQWs system, and is also beneficial in view of perspective applications such as intersubband polariton lasers.

Giornale/Rivista: PHYSICAL REVIEW B

Volume: 96 (23)      Da Pagina: 235301-1  A: 235301-6

Parole chiavi: SEMICONDUCTOR MICROCAVITIES; LINEWIDTHS; DISORDER; LASER
DOI: 10.1103/PhysRevB.96.235301

Citazioni: 14
dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2022-06-19
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