Electrical properties of laser-bonded Silicon-On-Diamond samples

Year: 2013

Authors: Sciortino S., Brandi F., Carzino R., Citroni M., De Sio A., Fanetti S., Lagomarsino S., Pace E., Parrini G., Passeri D., Scorzoni A., Servoli L., Tozzetti L.

Autors Affiliation: National Institute for Nuclear Physics, INFN, Florence, Italy;
Department of Physics and Astronomy, University of Florence, Italy;
Nanophysics, Istituto Italiano di Tecnologia, Genova, Italy; European Laboratory for Non-Linear Spectroscopy, LENS, Florence, Italy;
Dipartimento di Ingegneria Elettronica e della Informazione and INFN Sez. Perugia, Perugia, Italy

Abstract: In this work we report preliminary tests aimed at the implementation of a Silicon-On-Diamond (SOD) radiation sensor. SOD materials have been prepared by continuously scanning a 20 ps pulsed 355 nm laser beam on the silicon-diamond interface. A pixel monolithic sensor has also been bonded to diamond with the same technique and tested to show that a complex electronic chip can undergo the process without any damage. Through silicon vias have been fabricated by laser drilling on the silicon side of the SOD samples and their insulation from the silicon bulk has been tested. The charge collection efficiency of a diamond sensor with laser-written graphitic contacts has been measured, to demonstrate a reliable and simple way to fabricate ohmic contacts on the diamond side of the SOD devices. Finally, a SOD material with electric contacts on the silicon and on the diamond sides has been tested as a particle sensor to demonstrate the electrical continuity of the silicon-diamond interface after the bonding.


Volume: 730      Pages from: 159  to: 163

More Information: Conference: 9th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD). Location: Dipartimento Fis Astronomia, Sezione Astronomia Sci Spazio, Florence, ITALY. Date: OCT 09-12, 2012

KeyWords: Laser bonding; Diamond detectors; Silicon-On-Diamond; Charge collection efficiency
DOI: 10.1016/j.nima.2013.06.069

Citations: 3
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