Graphene Synthesis via Magnetic Inductive Heating of Copper Substrates

Year: 2013

Authors: Piner R., Huifeng Li H., Kong X., Tao L., Kholmanov I., Ji H., Lee W. H., Suk J. W., Ye J., Hao Y., Chen S., Magnuson C. W., Ismach A. F., Akinwande D., Ruoff R. S.

Autors Affiliation: Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, 1 University Station C2200, Austin, Texas 78712, United States; Microelectronics Research Center and Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas 78758, United States; CNR-IDASC Sensor Lab Department of Chemistry and Physics, University of Brescia, via Valotti, 9, Brescia 25133, Italy; Department of Organic and Nano System Engineering, Konkuk University, Seoul 143-701, South Korea; Department of Materials Science and Engineering, Inha University, Incheon 402-751, South Korea, and Department of Physics, Xiamen University, Xiamen 361005, People\’s Republic of China

Abstract: Scaling graphene growth using an oven to heat large substrates becomes less energy efficient as system size is increased. We report a route to graphene synthesis in which radio frequency (RF) magnetic fields inductively heat metal foils, yielding graphene of quality comparable to or higher than that of current chemical vapor deposition techniques. RF induction heating allows for rapid temperature ramp up/down, with great potential for large scale and rapid manufacturing of graphene with much better energy efficiency. Back-gated field effect transistors on a SiO2/Si substrate showed carrier mobility up to similar to 14000 cm(2) V-1 s(-1) measured under ambient conditions. Many advantages of RF heating are outlined, and some fundamental aspects of this approach are discussed.

Journal/Review: ACS NANO

Volume: 7 (9)      Pages from: 7495  to: 7499

More Information: We appreciate support from the W.M. Keck foundation and the NRI SWAN Center at UT-Austin.
DOI: 10.1021/nn4031564

Citations: 59
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