Scientific Results

Influence of the substrate platform on the opto-electronic properties of multi-layer organic light-emitting field-effect transistors

Year: 2011

Authors: Generali G., Dinelli F., Capelli R., Toffanin S., Muccini M.

Autors Affiliation: Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), via P. Gobetti 101, I-40129 Bologna, Italy; Consiglio Nazionale delle Ricerche (CNR), INO U.O.S. ‘A. Gozzini’ Area della Ricerca di Pisa – S. Cataldo, via Moruzzi 1, I-56124 Pisa, Italy

Abstract: In this paper, we present a study of the effects of the influence of the substrate platform on the properties of a three-layer vertical hetero-junction made of thin films of alpha, omega-diperfluorohexyl-4T (DHF4T), a blend of tris(8-hydroxyquinoline) aluminium (Alq3) and 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) and alpha, omega-dihexyl-quaterthiophene (DH4T). The hetero-junction represents the active component of an organic light-emitting transistor (OLET). The substrate platforms investigated in this study are glass/indium-tin-oxide/poly(methyl-methacrylate) (PMMA) and Si++/silicon oxide (SiO2)/PMMA. The first platform is almost completely transparent to light and therefore is very promising for use in OLET applications. The second one has been chosen for comparison as it employs standard microelectronic materials, i.e. Si++/SiO2. We show how different gate materials and structure can affect the relevant field-effect electrical characteristics, such as the charge mobility and threshold voltage. By means of an atomic force microscopy analysis, a systematic study has been made in order to correlate the morphology of the active layers with the electrical properties of the devices.


Volume: 44 (22)      Pages from: 224018  to: 224018

KeyWords: light-emitting field-effect; Polymer; Dielectric; Organic film growth; opto-electronic properties
DOI: 10.1088/0022-3727/44/22/224018

Citations: 6
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