Scientific Results

Correlation among Morphology, Crystallinity, and Charge Mobility in OFETs Made of Quaterthiophene Alkyl Derivatives on a Transparent Substrate Platform

Year: 2011

Authors: Generali G., Dinelli F., Capelli R., Toffanin S., di Maria F., Gazzano M., Barbarella G., Muccini, M.

Autors Affiliation: Consiglio Nazionale Delle Ricerche (CNR), Istituto per Lo Studio Dei Materiali Nanostrutturati (ISMN), via P. Gobetti 101, I-40129 Bologna, Italy; Consiglio Nazionale Delle Ricerche (CNR), INO UOS

Abstract: In this Article, we present a comprehensive study of organic field-effect transistors (OFETs) made of thin films of methyl, n-butyl, and n-hexyl end-substituted quaterthiophenes on a transparent substrate platform. This particular platform has been already used for organic light-emitting diodes (OLEDs) but rarely employed for OFETs. In perspective, this is a very promising route for the development of field-effect photonic applications such as organic light-emitting transistors (OLETs). A systematic characterization of the organic films has been made by means of atomic force microscopy (AFM) and X-ray diffraction (XRD) to correlate morphology, crystallinity and charge mobility to the alkyl chain length. In particular, a charge mobility value of 0.09 cm(2)/(V s) has been obtained in transparent OFETs with a large area channel for DH4T grown at room temperature. This mobility exceeds the one obtained on silicon-oxide substrates and is likely due to a more favorable interaction of the DH4T molecules with the PMMA layer employed as gate dielectric.


Volume: 115 (46)      Pages from: 23164  to: 23169

More Information: Financial support from Italian MISE through project Industria 2015 (ALADIN), Consorzio MIST E-R through project FESR-Tecnopolo AMBIMAT, and EU through projects FP7-ICT-248052 (PHOTO-FET) and FP7-ICT- 247928 (LAMP) is acknowledged.
KeyWords: field-effect transistors; light-emitting transistors; thin-film transistors; electrical characterization; organic semiconductor
DOI: 10.1021/jp2090704

Citations: 18
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