Silicon Raman polarizer

Anno: 2012

Autori: Kozlov V.V., Wabnitz S.

Affiliazione autori: Department of Information Engineering, Università di Brescia, Via Branze 38, 25123 Brescia, Italy; Department of Physics, St.-Petersburg State University, Petrodvoretz, St. Petersburg 198504, Russian Federation

Abstract: We theoretically investigate the polarization properties of Raman amplifiers based on silicon-on-insulator waveguides, and show that it is possible to realize a waveguide Raman polarizer. The Raman polarizer is a special type of Raman amplifier with the property of producing an amplified and highly repolarized beam when it is fed by a relatively weak and unpolarized signal.

Giornale/Rivista: OPTICS LETTERS

Volume: 37 (4)      Da Pagina: 737  A: 739

Maggiori informazioni: We thank Daniele Modotto for numerous valuable discussions. This work was carried out with support from the Programma di Ricerca Scientifica di Rilevante Interesse Nazionale project \”Nonlinear cross-polarization interactions in photonic devices and systems,\” and from the Fondazione Cariplo grant No. 2009-2730
Parole chiavi: Polarization properties; Raman amplifier; Silicon on insulator waveguide, Light amplifiers; Raman scattering; Waveguides, Optical instruments
DOI: 10.1364/OL.37.000737

Citazioni: 3
dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2024-04-14
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