Controlling In-Plane Isotropic and Anisotropic Orientation of Organic Semiconductor Molecules on Ionic Fluoride Dielectrics
Autori: Jiang T.M., Koshmak K., Giglia A., Banshchikov A., Sokolov N.S., Dinelli F., Capelli R., Pasquali L.
Affiliazione autori: Institut des Sciences Moléculaires d’Orsay, ISMO, UMR 8214, Université Paris Sud, Bâtiment 351, 91405 Orsay, France; Dipartimento di Ingegneria E. Ferrari, Università di Modena e Reggio Emilia, Via Vivarelli 10, 41125 Modena, Italy; CNR-IOM s.s. 14, Km. 163.5 in AREA Science Park, 34149 Basovizza, Trieste, Italy; Solid State Physics Division, Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytechnicheskaya str., 194021 St. Petersburg, Russia; CNR-INO Area della Ricerca di Pisa – S. Cataldo, via Moruzzi,1, I-56124 Pisa, Italy; Department of Physics, University of Johannesburg, P.O. Box 524, Auckland Park 2006, South Africa
Abstract: alpha-Sexithiophene (6T) ultrathin films have been grown on CaF2(111)/Si(111) planar surfaces and on CaF2(110)/Si(001) ridged surfaces by molecular beam epitaxy. The growth mode has been studied by means of atomic force microscopy (AFM), photoemission, and near edge X-ray absorption fine structure (NEXAFS). AFM reveals a substantial difference in the film morphology on the two substrates: on CaF2(111) large islands with flat terraces form with no in-plane preferential growth direction; on CaF2(110) narrow and elongated islands develop following the substrate corrugation. Photoemission and X-ray absorption at Ca L-2,L-3 and F K edges indicate that the interaction with the substrate is negligible. Near-edge X-ray absorption (NEXAFS) flanked by DFT calculations of the angular-resolved absorption cross section of 6T at the carbon K-edge reveal that the molecules on both substrates have their long axis vertically oriented with respect to the substrate plane. In addition, in-plane anisotropy of the molecular orientation has been observed on CaF2(110), and it has been interpreted in terms of well aligned molecules in the elongated islands.
Giornale/Rivista: JOURNAL OF PHYSICAL CHEMISTRY C
Volume: 121 (8) Da Pagina: 4426 A: 4433
Maggiori informazioni: T. Jiang thanks the Chinese Scholarship Council for his Ph.D. scholarship. This work was partly supported by Italian FAR 2015. The research leading to some of these results has received funding from the European CommunityParole chiavi: ELECTRONIC-STRUCTURE; ALPHA-SEXITHIOPHENE; EPITAXIAL-GROWTH; CAF2; ADSORPTIONDOI: 10.1021/acs.jpcc.6b12926Citazioni: 3dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2022-06-26Riferimenti tratti da Isi Web of Knowledge: (solo abbonati) Link per visualizzare la scheda su IsiWeb: Clicca quiLink per visualizzare la citazioni su IsiWeb: Clicca qui