Silicon-on-diamond material by pulsed laser technique
Anno: 2010
Autori: Lagomarsino S., Parrini G., Sciortino S., Santoro M., Citroni M., Vannoni M., Fossati A., Gorelli F., Molesini G., Scorzoni A.
Affiliazione autori: Istituto Nazionale di Fisica Nucleare – Sezione di Firenze, Via Sansone 1, 50019 Sesto Fiorentino; Dipartimento di Energetica, Università di Firenze, Via Santa Marta 3, 50139 Firenze; Dipartimento di Fisica, Università di Firenze, Via Sansone 1, 50019 Sesto Fiorentino; European Laboratory for Non-Linear Spectroscopy, University of Florence, 50019 Sesto Fiorentino; CNR-INFM CRS-SOFT, c/o Università di Roma “La Sapienza”, 00185 Roma; INOA-CNR, Largo E. Fermi 6, 50125 Firenze; Dipartimento di Ingegneria Civile, Università di Firenze, Via Santa Marta 3, 50139 Firenze; Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, 06123 Perugia; Dipartimento d’Ingegneria Elettronica e dell’Informazione, Università di Perugia, 06125 Perugia; IMM-CNR, Sezione di Bologna, 40129 Bologna
Abstract: We present a method to bond directly silicon and diamond plates to obtain a single silicon-on-diamond material, with a carbon-silicon interface of unprecedent quality. The bonding is performed at room temperature, via picosecond 355 nm pulsed laser irradiation of the silicon-diamond interface, through the transparent diamond. The obtained material exhibits excellent mechanical strength and uniformity of the bonding, as shown by mechanical tests and analysis of the cross section based on scanning electron microscopy. The bonding is ascribed to silicon carbide nanolayers at the interface which, along with amorphous silicon nanolayers, have been quantitatively detected and evaluated by means of optical spectroscopy measurements. A physical insight into the process occurring at the diamond-silicon interface during the pulsed irradiation and cooling has been provided by a finite element numerical model. A rationale is then given for the observed SiC bond in terms of silicon and diamond melting and inter-diffusion. A crucial outcome of the model consists in predicting the effect of the different laser beam parameters on the bonding process, thereby allowing us to obtain a well tailored procedure. An excellent quality silicon-on-diamond is now available for implementing highly integrated electronic devices for diverse application areas, ranging from pixel detectors to biosensors and prostheses for the human body.
Giornale/Rivista: APPLIED PHYSICS LETTERS
Volume: 96 (3) Da Pagina: 031901-1 A: 031901-3
Parole chiavi: A-carbon; Bonding process; Cross section; Diamond materials; Diamond melting; Diverse applications; Finite Element; Highly integrated; Human bodies; Inter-diffusion; Laser beam parameters; Mechanical strength; Mechanical tests; Nano layers; Numerical models; Optical spectroscopy; Picoseconds; Pixel detector; Pulsed irradiation; Pulsed laser; Pulsed laser irradiation; Room temperature; Si-C bond; Silicon interface; Biosensors; Diamonds; Finite element method; Irradiation; Pulsed laser applications; Pulsed lasers; Scanning electron microscopy; Silicon carbide; Silicon detectors; Surface chemistry; Amorphous siliconDOI: 10.1063/1.3291043Citazioni: 11dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2024-04-21Riferimenti tratti da Isi Web of Knowledge: (solo abbonati) Link per visualizzare la scheda su IsiWeb: Clicca quiLink per visualizzare la citazioni su IsiWeb: Clicca qui