Photoluminescence of nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond at room and higher temperatures
Autori: Sledz F., Piccolomo S., Flatae A.M., Lagomarsino S., Rechenberg R., Becker M.F., Sciortino S., Gelli N., Khramtsov I.A., Fedyanin D. Yu., Speranza G., Giuntini L., Agio M.
Affiliazione autori: Laboratory of Nano-Optics and Cμ, University of Siegen, Germany; Centro Materiali e Microsistemi, Fondazione Bruno Kessler, Italy; Istituto Nazionale di Fisica Nucleare, Sezione di Firenze, Italy; Fraunhofer USA Center Midwest, USA; Dipartimento di Fisica e Astronomia, University of Florence, Italy; Laboratory of Nanooptics and Plasmonics, Moscow Institute of Physics and Technology, Russian Federation; National Institute of Optics (INO), National Research Council (CNR), Italy
Abstract: Phosphorus-doped diamond is relevant for applications in sensing, optoelectronics and quantum photonics, since the unique optical properties of color centers in diamond can be combined with the n-type conductivity attained by the inclusion of phosphorus. Here, we investigate the photoluminescence signal of the nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond as a function of temperature starting from ambient conditions up to about 100◦ Celsius, focusing on the zero-phonon line (ZPL). We find that the wavelength and width of the ZPL of the two color centers exhibit a comparable dependence on tempera- ture, despite the strong difference in the photoluminescence spectra. Moreover, the temperature sensitivity of the ZPL of the silicon-vacancy center is not significantly affected by phosphorus-doping, as we infer by comparison with silicon-vacancy centers in optical-grade single-crystal diamond.
Giornale/Rivista: NUOVO CIMENTO C
Volume: 44 (05) Da Pagina: 106-1 A: 106-4
Maggiori informazioni: The authors acknowledge funding from the University of Siegen, the German Research Association (DFG) (INST 221/118-1 FUGG, 410405168) and the Russian Foundation for Basic Research (19-57-12008). GS and SP would like to thank the Provincia Autonoma di Trento for supporting their research in the framework of Q@TN initiative on Quantum Technologies. The authors also acknowledge INFN-CHNet, the network of laboratories of the INFN for cultural heritage, for support and precious contributions in terms of instrumentation and personnel. AMF and MA would like to thank P. Reuschel and N. Soltani for experimental support.Parole chiavi: CVD diamond, color centers, temperature sensingDOI: 10.1393/ncc/i2021-21106-6Link per visualizzare la scheda su IsiWeb: Clicca qui