Risultati scientifici

Response to NO2 and other gases of resistive chemically exfoliated MoS2-based gas sensors

Anno: 2015

Autori: Donarelli M., Prezioso S., Perrozzi F., Bisti F., Nardone M., Giancaterini L., Cantalini C., Ottaviano L.

Affiliazione autori: Univ Aquila, Dept Phys & Chem Sci, I-67100 Laquila, Italy;‎ Univ Aquila, Dept Ind & Informat Engn & Econ, I-67100 Laquila, Italy;‎ UOS Aquila, CNR SPIN, I-67100 Laquila, Italy

Abstract: We report on the fabrication, the morphological, structural, and chemical characterization, and the study of the electrical response to NO2 and other gases of resistive type gas sensors based on liquid chemically exfoliated (in N-methyl pyrrolidone, NMP) MoS2 flakes annealed in air either at 150 degrees C or at 250 degrees C. The active material has been analyzed by scanning electron microscopy (SEM), and micro Raman and X-ray core level photoemission spectroscopies. SEM shows that MoS2 exfoliated flakes are interconnected between electrodes of the sensing device to form percolation paths. Raman spectroscopy of the flakes before annealing demonstrates that the flakes are constituted by crystalline MoS2, while, annealing at 250 degrees C, does not introduce a detectable bulk contamination in the expected form of MoO3. The sensor obtained by thermal annealing in air at 150 degrees C exhibits a peculiar p-type response under exposure to NO2. In line with core level spectroscopy evidences, this behavior is potentially ascribed to nitrogen substitutional doping of S vacancies in the MoS2 surface (nitrogen atoms being likely provided by the intercalated NMP). Thermal annealing the MoS2 flakes in air at 250 degrees C irreversibly sets an n-type behavior of the gas sensing device, with a NO2 detection limit of 20 ppb. This behavior is assigned, in line with core level spectroscopy data, to a significant presence of S vacancies in the MoS2 annealed flakes and to the surface co-existence of MoO3 arising from the partial oxidation of the flakes surface. Both p-and n-type sensors have been demonstrated to be sensitive also to relative humidity. The n-type sensor shows good electrical response under H-2 exposure. (C) 2014 Elsevier B.V. All rights reserved.


Volume: 207      Da Pagina: 602  A: 613

Parole chiavi: Few-layers MoS2; NO2 sensing; Resistive sensing; Scanning electron microscopy; Raman spectroscopy; X-ray photoelectron spectroscopy
DOI: 10.1016/j.snb.2014.10.099

Citazioni: 233
dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2021-12-05
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