Risultati scientifici

Silicon carbide for future intense luminosity nuclear physics investigations

Anno: 2019

Autori: Tudisco S., Altana C., Boscardin M., Calcagno L., Ciampi C., Cirrone GAP., Fazzi A., Giove D., Gorini G., Labate L., La Via F., Lanzalone G., Litrico G., Muoio A., Pasquali G., Puglia SMR., Rebai M., Ronchin S., Santangelo A., Scuderi V., Trifiro A., Zimbone M.

Affiliazione autori: INFN, LNS, Catania, Italy;‎ Fdn Bruno Kessler FBK Trento, TIFPA, INFN, Natl Inst Nucl Phys, Trento, Italy; INFN, Sez Catania, Catania, Italy;‎ Univ Catania, Dept Phys & Astron, Catania, Italy; Nazl Fis Nucl INFN, Sez Firenze, Sesto Fiorentino, Italy; Univ Firenze, Dipartimento Fis, Sesto Fiorentino, Italy; Politecn Milan, INFN, Dept Energy, Sez Milano, Milan, Italy; Univ Milano Bicocca, Dept Phys, Sez Milano Bicocca, INFN, Milan, Italy; CNR, INO, Pisa, Italy;‎ CNR, Natl Res Council, IMM, Catania, Italy; Univ Enna Kore, Dept Engn & Architecture, Enna, Italy; Epitaxial Technol Ctr LPE, Catania, Italy;‎ STMicroelectronics, Str Primosole, Catania, Italy; Univ Messina, Dipartimento Sci MIFT, Messina, Italy

Abstract: Silicon carbide (SiC) is one of the compound semiconductor which has been considered as a potential alternative to Silicon for the fabrication of radiation hard particles detectors. Material, detectors implementation and possible application in the future INFN projects has been discussed.

Giornale/Rivista: NUOVO CIMENTO C-COLLOQUIA AND COMMUNICATIONS IN PHYSICS

Volume: 42 (2-3)      Da Pagina: 74-1  A: 74-4

Parole chiavi: CROSS-SECTION; IRRADIATION; PROTON; RAY
DOI: 10.1393/ncc/i2019-19074-1

Citazioni: 4
dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2021-09-19
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